Atomic and electronic properties of realizable size single-crystal GaN nanotubes by first principles

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 9, 2011, Pages 7753-7761

  Yilmaz, Hulusi ^a   Singh, Surinder P ^a,b   Marin, Carlos ^a,b   Weiner, Brad R ^a   Morell, Gerardo ^a  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

^b UNIVERSITY OF PUERTO RICO   (Puerto Rico)

Author keywords

DFT; Electronic Properties; GaN Nanostructures; Quantum Confinement

Indexed keywords

BAND GAPS; BAND-GAP REGION; BOND DISTANCE; DEFECT STATE; DFT; ELECTRON MASS; ELECTRONIC DENSITY; FIRST PRINCIPLE CALCULATIONS; FIRST-PRINCIPLES; FORMATION ENERGIES; GAN NANOSTRUCTURES; GAN NANOTUBES; HEXAGONAL GAN; HEXAGONAL VOID; WALL THICKNESS; WURTZITES;

ATOMS; ELECTRONIC PROPERTIES; ENERGY GAP; HYDROGEN; NANOTUBES; NANOWIRES; QUANTUM CONFINEMENT; TUBES (COMPONENTS); ZINC SULFIDE;

GALLIUM NITRIDE;

EID: 84863066941     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2011.4727     Document Type: Conference Paper

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