Synthesis and in-situ TEM transport measurements of individual GaN nanowires and nanotubes

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 6, 2010, Pages 3945-3951

  Liu, Baodan ^a   Bando, Yoshio ^a   Wang, Mingsheng ^a   Golberg, Dmitri ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Electrical transport; GaN; Nanotubes; Nanowires; Transmission electron microscopy

Indexed keywords

AU PARTICLES; AVERAGE DIAMETER; ELECTRICAL TRANSPORT; GAN; GAN NANOTUBES; GAN NANOWIRES; HIGH-PURITY; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; IN-SITU; IN-SITU TEM; LARGE DIAMETER; NI CATALYSTS; ROUGH SURFACES; SAPPHIRE SUBSTRATES; SMOOTH SURFACE; TRANSPORT MEASUREMENTS;

CRYSTALLOGRAPHY; ELECTRIC WIRE; GALLIUM NITRIDE; MICROSCOPES; MORPHOLOGY; NANOTUBES; NANOWIRES; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 77954995697     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.1993     Document Type: Article

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