Raman study of strained Ge1-xSnx alloys

Applied Physics Letters

Volumn 98, Issue 26, 2011, Pages

  Lin, Hai ^a   Chen, Robert ^a   Huo, Yijie ^a   Kamins, Theodore I ^a   Harris, James S ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY LAYERS; GAAS SUBSTRATES; LONGITUDINAL OPTICAL; PEAK FREQUENCIES; RAMAN STUDIES; STRAIN RANGES; STRAINED-GE;

ALLOYS; CERIUM ALLOYS; GALLIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; TIN; TIN ALLOYS;

GERMANIUM;

EID: 79960097880     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3606384     Document Type: Article

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