Fundamental origin of excellent low-noise property in 3D Si-MOSFETs - Impact of charge-centroid in the channel due to quantum effect on 1/f noise ∼

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Feng, W ^a,b   Hettiarachchi, R ^a,b   Lee, Y ^c   Sato, S ^c   Kakushima, K ^c   Sato, M ^a,b   Fukuda, K ^b,d   Niwa, M ^a,b   Yamabe, K ^a   Shiraishi, K ^a,b   Iwai, H ^c   Ohmori, K ^a,b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; ELECTRON DISTRIBUTIONS; INVERSION CHANNELS; LOW NOISE; MOSFETS; NOISE PROPERTIES; NOISE SPECTRAL DENSITY; QUANTUM EFFECTS; SELF-CONSISTENT CALCULATION; SI NANOWIRE;

ELECTRON DEVICES; MESFET DEVICES; NANOWIRES; POISSON EQUATION; QUANTUM ELECTRONICS; SILICON; THREE DIMENSIONAL;

MOSFET DEVICES;

EID: 84863033906     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131627     Document Type: Conference Paper

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