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Volumn 11, Issue 5, 2011, Pages 4511-4516

Microfabrication of SiN membrane nanosieve using anisotropic reactive ion etching (ARIE) with an Ar/CF 4 gas flow

Author keywords

Anisotropic etch; Nanomachining; Nanosieve; SiN membrane

Indexed keywords

ANISOTROPIC ETCH; ANISOTROPIC REACTIVE ION ETCHING; CMOS IC; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; E-BEAM RESIST; ELECTRON BEAM WRITING; ETCH HOLE; HIGH TEMPERATURE; HYDROGEN CHLORIDE; HYDROGEN FLUORIDE; NANOMACHINING; NANOSIEVE; TRANSMEMBRANE PRESSURES;

EID: 84863012798     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2011.3631     Document Type: Conference Paper
Times cited : (8)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.