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Volumn , Issue , 2011, Pages 555-556

Transparent oxide semiconductors: Recent material developments and new applications

Author keywords

amorphous oxide semiconductor; RRAM; surface functionalization; TFT

Indexed keywords

ACTIVE MATRIX DISPLAYS; AMORPHOUS OXIDE SEMICONDUCTORS; ELECTRONIC APPLICATION; MATERIAL DEVELOPMENT; NEW APPLICATIONS; RESISTIVE RANDOM ACCESS MEMORY; RRAM; SEMICONDUCTING MATERIALS; SURFACE FUNCTIONALIZATION; TFT; TRANSPARENT OXIDE SEMICONDUCTOR;

EID: 84862927905     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PHO.2011.6110668     Document Type: Conference Paper
Times cited : (2)

References (7)
  • 1
    • 9744248669 scopus 로고    scopus 로고
    • Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
    • Nomura, K; Ohta, H; Takagi, A.; Kamiya, T.; Hirano, M.; Hosono, H.; Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 2004, 432 (7016), 488.
    • (2004) Nature , vol.432 , Issue.7016 , pp. 488
    • Nomura, K.1    Ohta, H.2    Takagi, A.3    Kamiya, T.4    Hirano, M.5    Hosono, H.6
  • 2
    • 13544269370 scopus 로고    scopus 로고
    • High mobility transparent thin-film transistors with amorpous zinc tin oxide channel layer
    • Chiang, H.Q.; Wager, J.F.; Hoffman, R.L.; Jeong, J.; Keszler, D.A.; High mobility transparent thin-film transistors with amorpous zinc tin oxide channel layer, Applied Physics Letters 2005, 86 (1), 013503.
    • (2005) Applied Physics Letters , vol.86 , Issue.1 , pp. 013503
    • Chiang, H.Q.1    Wager, J.F.2    Hoffman, R.L.3    Jeong, J.4    Keszler, D.A.5
  • 4
    • 0030206894 scopus 로고    scopus 로고
    • Novel oxide amorphous semiconductors: Transparent conducting amorphous oxides
    • Hosono, H.; Yasukawa; Kawazoe, H; Novel oxide amorphous semiconductors: Transparent conducting amorphous oxides, Journal of Non-Crystalline Solids 1996, 203, 334
    • (1996) Journal of Non-Crystalline Solids , vol.203 , pp. 334
    • Hosono, H.1    Yasukawa2    Kawazoe, H.3
  • 5
    • 27644464403 scopus 로고    scopus 로고
    • High-performance flexible zinc tin oxide field-effect transistors
    • Jackson, W.B.; Hoffman, R.L.; Herman, G.S.; High-performance flexible zinc tin oxide field-effect transistors, Applied Physics Letters 2005, 87 (19), 193503.
    • (2005) Applied Physics Letters , vol.87 , Issue.19 , pp. 193503
    • Jackson, W.B.1    Hoffman, R.L.2    Herman, G.S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.