SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics

Volumn 48, Issue 5 PART 2, 2009, Pages

Switchable Pt/TiO2-x/Pt schottky diodes

(3) Zhong, Ni a,b Shima, Hisashi a,b Akinaga, Hiro a,b

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AFTER HIGH TEMPERATURE; ANNEALING TEMPERATURES; CURRENT VOLTAGE; FORWARD CURRENTS; INITIAL STATE; NEGATIVE BIAS; NEGATIVE PULSE VOLTAGE; POLARITY SWITCHES; POSITIVE BIAS; PULSE VOLTAGE; SCHOTTKY; SCHOTTKY DIODES; SWITCHABLE; TIO;

DIODES; DISTILLATION; OXYGEN; OXYGEN VACANCIES; PLATINUM; SCHOTTKY BARRIER DIODES; THERMAL EFFECTS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70249104674 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.05DF03 Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.