Ga-catalyzed growth of ZnSe nanowires and the cathodoluminescence and electric transport properties of individual nanowire

Materials Chemistry and Physics

Volumn 133, Issue 2-3, 2012, Pages 823-828

  Lei, M ^a   Fu, X L ^a   Yang, H J ^a   Wang, Y G ^a   Li, P G ^b   Hu, Q R ^a   Tang, W H ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

Cathodoluminescence; Electric transport property; Ga catalyzed; Nanowires; ZnSe

Indexed keywords

APPLIED VOLTAGES; CATHODOLUMINESCENCE SPECTRA; DEEP LEVEL EMISSION; DONOR-ACCEPTOR PAIRS; ELECTRIC POWER DISSIPATION; ELECTRIC TRANSPORT PROPERTIES; ELECTRIC TRANSPORT PROPERTY; ELECTRICAL TRANSPORT PROPERTIES; GA-CATALYZED; GAAS SUBSTRATES; INTERSTITIALS; INTRINSIC POINT DEFECTS; LINEAR RELATION; NEAR BAND EDGE EMISSIONS; PRE-OXIDIZED; SELF-ACTIVATED LUMINESCENCE; THERMAL EVAPORATION METHOD; VOLTAGE CURVE; ZINC-BLENDE; ZNSE; ZNSE NANOWIRES;

CATALYSIS; CATALYSTS; CATHODOLUMINESCENCE; GALLIUM ALLOYS; GALLIUM ARSENIDE; NANOWIRES; POINT DEFECTS; SEMICONDUCTING GALLIUM; THERMAL EVAPORATION; TRANSPORT PROPERTIES; ZINC;

ELECTRIC PROPERTIES;

EID: 84862825539     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2012.01.101     Document Type: Article

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