ZnSe/ZnCdSe heterostructure nanowires

Journal of Crystal Growth

Volumn 312, Issue 10, 2010, Pages 1670-1675

  Hsiao, C H ^a   Chang, S J ^a   Hung, S C ^b   Cheng, Y C ^c   Huang, B R ^d   Wang, S B ^a   Lan, B W ^a   Chih, S H ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SHIH CHIEN UNIVERSITY   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

A3. Heterstructure nanowire; A3. MBE; A3. Quantum confinement; B2. ZnSe ZnCdSe

Indexed keywords

A3. HETERSTRUCTURE NANOWIRE; A3. MBE; AS-GROWN; HETEROSTRUCTURES; HEXAGONAL WURTZITE STRUCTURE; HIGH DENSITY; PHOTOLUMINESCENCE INTENSITIES; SI SUBSTRATES; WELL WIDTH; ZINC-BLENDE; ZNSE NANOWIRES;

ACTIVATION ENERGY; QUANTUM CONFINEMENT; ZINC; ZINC SULFIDE;

NANOWIRES;

EID: 77950296652     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.02.008     Document Type: Article

References (26)

1. Eason D.B., Yu Z., Hughes W.C., Roland W.H., Boney C., Cook J.W., Schetzina J.F., Cantwell G., and Harsch W.C. Appl. Phys. Lett. 66 (1995) 115
2. Taniguchi S., Hino T., Itoh S., Nakano K., Nakayama N., Ishibashi A., and Ikeda M. Electron. Lett. 32 (1996) 552
3. Ishikura H., Fukuda N., Itoi M., Yasumoto K., Abe T., Kasada H., and Ando K. J. Cryst. Growth 214 (2000) 1130
4. Xiang B., Zhang H.Z., Li G.H., Yang F.H., Su F.H., Wang R.M., Xu J., Lu G.W., Sun X.C., Zhao Q., and Yu D.P. Appl. Phys. Lett. 82 (2003) 3330
5. Zhang X.T., Ip K.M., Liu Z., Leung Y.P., Li Q., and Hark S.K. Appl. Phys. Lett. 84 (2004) 2641
6. Colli A., Hofmann S., Ferrari A.C., Ducati C., Martelli F., Rubini S., Cabrini S., Franciosi A., and Robertson J. Appl. Phys. Lett. 86 (2005) 153103
7. Chan Y.F., Duan X.F., Chan S.K., Sou I.K., Zhang X.X., and Wang N. Appl. Phys. Lett. 83 (2005) 2665
8. Zhu Y.C., and Bando Y. Chem. Phys. Lett. 377 (2003) 367
9. Zhao J.L., and Lib X.M. Appl. Phys. Lett. 90 (2007) 062118
10. Chang S.J., Hsueh T.J., Chen I.C., Hsieh S.F., Chang S.P., Hsu C.L., Lin Y.R., and Huang B.R. IEEE Trans. Nanotechnol. 7 (2008) 754
11. Soci C., Zhang A., Xiang B., Dayeh S.A., Aplin D.P.R., Park J., Bao X.Y., Lo Y.H., and Wang D. Nano Lett. 7 (2007)
12. Soci C., Zhang A., Xiang B., Dayeh S.A., Aplin D.P.R., Park J., Bao X.Y., Lo Y.H., and Wang D. 1003 (2007)
13. Hsiao C.H., Chang S.J., Wang S.B., Chang S.P., Li T.C., Lin W.J., Ko C.H., Kuan T.M., and Huang B.R. J. Electrochem. Soc. 156 (2009) J73
14. Yan J., Fang X., Zhang L., Bando Y., Gautam U.K., Dierre B., Sekiguchi T., and Golberg D. Nano Lett. 8 (2008) 2794
15. Zhang X.T., Liu Z., Li Q., and Hark S.K. J. Phys. Chem. B 109 (2005) 17913
16. Colli A., Hofmann S., Ferrari A.C., Martelli F., Rubini S., Ducati C., Franciosi A., and Robertson J. Nanotechnology 16 (2005) S139
17. Kaibyshev V.K., Travnikov W., and Davydov W. Phys. Solid State 45 (2003) 1374
18. Zhang X.T., Ip K.N., Li Q., and Hark S.K. Appl. Phys. Lett. 86 (2005) 203114
19. Hong H., and Anderson W.A. IEEE Trans. Electron. Devices 46 (1999) 1127
20. Gudiksen M.S., Lauhon L.J., Wang J., Smith D.C., and Lieber C.M. Nature 415 (2002) 617
21. Dong A.G., Wang F.D., Daulton T.L., and Buhro W.E. Nano Lett. 7 (2007) 1308
22. Bjork M.T., Ohlsson B.J., Thelander C., Persson A.I., Deppert K., Wallenberg L.R., and Samuelson L. Appl. Phys. Lett. 81 (2002) 4458
23. Venugopal R., Lin P.I., and Chen Y.T. J. Phys. Chem. B 110 (2006) 11691
24. Park W.I., An S.J., Yang J.L., Yi G.C., Hong S., Joo T., and Kim M. J. Phys. Chem. B 108 (2004) 15457
25. Yasan A., McClintock R., Mayes K., Kim D.H., Kung P., and Razeghi M. Appl. Phys. Lett. 83 (2003) 4083
26. Tournie E., Morhain C., Leroux M., Ongaretto C., and Faurie J.P. Appl. Phys. Lett. 67 (1995) 103