Manganese-induced growth of GaAs nanowires

Nano Letters

Volumn 6, Issue 9, 2006, Pages 2130-2134

  Martelli, Faustino ^a,b   Rubini, Silvia ^a,b   Piccin, Matteo ^a,b   Bais, Giorgio ^a,b   Jabeen, Fauzia ^a,b   De Franceschi, Silvano ^a   Grillo, Vincenzo ^a   Carlino, Elvio ^a   D'Acapito, Francesco ^c   Boscherini, Federico ^d   Cabrini, Stefano ^a   Lazzarino, Marco ^a   Businaro, Luca ^a   Romanato, Filippo ^a   Franciosi, Alfonso ^a,b  

^a LABORATORIO TASC   (Italy)

^b UNIVERSITY OF TRIESTE   (Italy)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^d UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DIFFUSION; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

GROWTH CATALYSTS; TRANSPORT MEASUREMENTS; WURTZITE-TYPE LATTICES;

NANOSTRUCTURED MATERIALS;

GALLIUM; GALLIUM ARSENIDE; MANGANESE; NANOTUBE; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

ARSENICALS; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GALLIUM; MANGANESE; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTUBES; PARTICLE SIZE; SEMICONDUCTORS; SURFACE PROPERTIES;

EID: 33749856612     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0607838     Document Type: Article

References (31)

1. For a recent review on semiconductor nanowires, see: Law, M.; Goldberger, J.; Yang, P. Annu. Rev. Mater. Res. 2004, 34, 83.
2. Cui, Y.; Wei, Q.; Park, H.; Lieber, C. M. Science 2001, 293, 1289.
3. Duan, X.; Huang, Y.; Cui, Y.; Wang, J.; Lieber, C. M. Nature 2001, 409, 66.
4. Thelander, C.; Mårtensson, T.; Björk, M. T.; Ohlsson, B. J.; Larsson, M. W.; Wallenberg, L. R.; Samuelson L. Appl. Phys. Lett. 2003, 83, 2052.
5. Baxter, J. B.; Aydil, E. S. Appl. Phys. Lett. 2005, 86, 053114.
6. Persson, A. I.; Larsson, M. W.; Stenström, S.; Ohlsson, B. J.; Samuelson, L.; Wallenberg, L. R. Nat. Mater. 2004, 3, 677.
7. Dick, K. A.; Deppert, K.; Mårtensson, T.; Mandl, B.; Samuelson, L.; Seifert, W. Nano Lett. 2005, 5, 761.
8. Dietl, T.; Ohno, H.; Matsukura, F.; Cibert, J.; Ferrand D. Science 2000, 287, 1019.
9. Matsukura, F.; Ohno, H.; Shen, A.; Sugawara, Y. Phys. Rev. B 1998, 57, R2037.
10. Nazmul, A. M.; Sugahara, S.; Tanaka, M. Appl. Phys. Lett. 2002, 80, 3120.
11. Ronning, C.; Gao, P. X.; Ding, Y.; Wang, Z. L. Appl. Phys. Lett. 2004, 84, 783.
12. Chang, Y. Q.; Wang, D. B.; Luo, X. H.; Xu, X. Y.; Chen, X. H.; Li, L.; Chen, C. P.; Wang, R. M.; Xu, J.; Yu, D. P. Appl. Phys. Lett. 2003, 83, 4020.
13. Deepak, F. L.; Vanitha, P. V.; Govindaraj, A.; Rao, C. N. R. Chem. Phys. Lett. 2003, 374, 314.
14. Han, D. S.; Park, J.; Rhie, K. W.; Kim, S.; Chang, J. Appl. Phys. Lett. 2005, 86, 032506.
15. Baik, J. M.; Yoon, S. T.; Kang, W.; Lee, J.-L. Appl. Phys. Lett. 2005, 87, 042105.
16. Radovanovic, P. V.; Barrelet, C. J.; Gradeèak, S.; Quian, F.; Lieber, C. M. Nano Lett. 2005, 5, 1407.
17. Li, Y. Q.; Zapien, J. A.; Shan, Y. Y.; Liu, Y. K.; Lee, S. T. Appl. Phys. Lett. 2006, 88, 013115.
18. May, S. J.; Zheng, J.-G.; Wessels, B. W.; Lauhon, L. J. Adv. Mater. 2005, 17, 598.
19. See, e.g.: Xiang, B.; Zhang, H. Z.; Li, G. H.; Yang, F. H.; Su, F. H.; Wang, R. M.; Xu, J.; Lu, G. W.; Sun, X. C.; Zhao, Q.; Yu, D. P. Appl. Phys. Lett. 2003, 82, 3330.
20. Zhang, X. T.; Ip, K. M.; Li, Q.; Hark, S. K. Appl. Phys. Lett. 2005, 86, 203114.
21. Perea, E. P.; Allen, J. E.; May, S. J.; Wessels, B. W.; Seidman, D. N.; Lauhon, L. J. Nano Lett. 2006, 6, 181.
22. Carlino, E.; Martelli, F.; Rubini, S.; Franciosi, A. Philos. Mag. Lett. 2006, 86, 261.
23. The temperature used for sample degassing, 300°C, is well below the temperature necessary to remove the oxide present on the GaAs surface (580°C). The GaAs substrates were then used without preliminary removal of the surface oxide. We have also tried to grow Mn-catalyzed wires on epitaxial GaAs layers (both (100) and (111)), obtaining scarce and not reproducible results.
24. Hiruma, K.; Yazawa, M.; Haraguchi, K.; Ogawa, K.; Katsuyama, T.; Koguchi, M.; Kakibayashi, H. J. Appl. Phys. 1993, 74, 3162.
25. Soshnikov, I. P.; Tsyrlin, G. É.; Tonkikh, A. A.; Samsonenko, Yu. B.; Dubovski, V. G.; Ustinov, V. M.; Gorbenko, O. M.; Litvinov, D.; Gerthsen, D. Phys. Solid State 2005, 47, 2213;
26. translated from Fiz. Tverd. Tela 2005, 47, 2121.
27. Akiyama, T.; Nakayama, K.; Ito, T. Phys. Rev. B 2006, 73, 235308.
28. Pascarelli, S.; Boscherini, F.; d'Acapito, F.; Hrdy, J.; Meneghini, C.; Mobilio, S. J. Synchrotron Radiat. 1996, 3, 147.
29. D'Acapito, F.; Smolentsev, G.; Boscherini, F.; Piccin, M.; Bais, G.; Rubini, S.; Martelli, F.; Franciosi, A. Phys. Rev. B 2006, 73, 035314.
30. Ankundinov, A.; Ravel, B.; Rehr, J.; Conradson, S. Phys. Rev. B 1998, 55, 7565.
31. Soo, Y. L.; Huang, S. W.; Ming, Z. H.; Kao Y. H.; Munekata, H. L.; Chang, L. Phys. Rev. B 1996, 53, 4905.