Characteristics of NiO-AZO thin films deposited by magnetron co-sputtering in an O 2 atmosphere

Materials Letters

Volumn 74, Issue , 2012, Pages 30-32

  Park, H W ^a   Bang, J H ^a   Hui, K N ^a   Song, P K ^a   Cheong, W S ^b   Kang, B S ^a  

^a Pusan National University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Al doped ZnO; Bond enthalpy; Magnetron co sputtering; NiO

Indexed keywords

AL-DOPED ZNO; BOND ENTHALPIES; CONTACT ELECTRODES; I-V MEASUREMENTS; MAGNETRON CO-SPUTTERING; NIO; P-N JUNCTION; P-TYPE CONDUCTIVITY; POTENTIAL APPLICATIONS; RECTIFYING CHARACTERISTICS; RF-MAGNETRON CO-SPUTTERING; X RAY PHOTOELECTRON SPECTROSCOPIES (XPS);

ALUMINUM; ENTHALPY; GALLIUM NITRIDE; MAGNETRONS; SEMICONDUCTOR JUNCTIONS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

THIN FILMS;

EID: 84862823165     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2012.01.021     Document Type: Article

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