Experimental determination of quantum and centroid capacitance in arsenideantimonide quantum-well MOSFETs incorporating nonparabolicity effect

IEEE Transactions on Electron Devices

Volumn 58, Issue 5, 2011, Pages 1397-1403

  Ali, Ashkar ^a   Madan, Himanshu ^a   Misra, Rajiv ^a   Agrawal, Ashish ^a   Schiffer, Peter ^a   Boos, J Brad ^b   Bennett, Brian R ^b   Datta, Suman ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Effective mass; high dielectric; InAsSb; interface states; nonparabolicity; quantum capacitance; split capacitance voltage

Indexed keywords

EFFECTIVE MASS; INASSB; INTERFACE STATES; NON PARABOLICITY; QUANTUM CAPACITANCE; SPLIT CAPACITANCE-VOLTAGE;

CAPACITANCE MEASUREMENT; INDIUM ANTIMONIDES; INDIUM ARSENIDE; MATHEMATICAL MODELS; MOSFET DEVICES; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS;

CAPACITANCE;

EID: 79955541223     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2110652     Document Type: Article

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