Low-frequency noise in oxide-based (TiN/HfO x/Pt) resistive random access memory cells

IEEE Transactions on Electron Devices

Volumn 59, Issue 3, 2012, Pages 850-853

  Fang, Z ^a,b   Yu, H Y ^c   Chroboczek, J A ^d   Ghibaudo, G ^d   Buckley, J ^e   De Salvo, B ^e   Li, X ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^d MINATEC   (France)

^e CEA LETI   (France)

Author keywords

Current conduction; filament noise model; low frequency noise (LFN); resistive random access memory (RRAM)

Indexed keywords

CARRIER NUMBER FLUCTUATION; CURRENT CONDUCTION; HIGH-RESISTANCE STATE; LOW-FREQUENCY NOISE; LOW-RESISTANCE STATE; PHYSICAL ANALYSIS; RANDOM ACCESS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); TRAP CONCENTRATION;

RANDOM ACCESS STORAGE;

PLATINUM;

EID: 84862802785     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2178245     Document Type: Article

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