Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Shinohara, K ^a   Regan, D ^a   Corrion, A ^a   Brown, D ^a   Burnham, S ^a   Willadsen, P J ^a   Alvarado Rodriguez, I ^a   Cunningham, M ^a   Butler, C ^a   Schmitz, A ^a   Kim, S ^a   Holden, B ^a   Chang, D ^a   Lee, V ^b   Ohoka, A ^b   Asbeck, P M ^b   Micovic, M ^a  

^a Hughes Aircraft Co   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; BARRIER LAYERS; DC AND RF CHARACTERISTICS; DELAY TIME ANALYSIS; DH-HEMTS; DOUBLE-HETEROJUNCTION; ELECTRON VELOCITY; ENHANCEMENT-MODE; GATE LENGTH; HIGH YIELD; RF PERFORMANCE; SELF-ALIGNED GATE; SOURCE-DRAIN;

CUTOFF FREQUENCY; ELECTRON DEVICES; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS;

GALLIUM NITRIDE;

EID: 84863013761     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131582     Document Type: Conference Paper

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