The effect of annealing temperature, residual O 2 partial pressure, and ambient flow rate on the growth of SiO x nanowires

Applied Physics A: Materials Science and Processing

Volumn 107, Issue 4, 2012, Pages 885-890

  Yang, Yi ^a,b   Shalav, Avi ^a   Kim, Taehyun ^a   Elliman, Robert G ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT FLOW; ANNEALING GAS; ANNEALING TEMPERATURES; EFFECTS OF TEMPERATURE; METAL-COATED; NANOWIRE FILMS; SI SUBSTRATES; SILICA NANO WIRES; SUBSTRATE SURFACE; VAPOR CONCENTRATIONS; VELOCITY PROFILES;

NANOWIRES; SILICA; VAPORS;

FLOW RATE;

EID: 84862793320     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-012-6814-9     Document Type: Article

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