Control of amorphous silica nanowire growth by oxygen content of Si-rich oxide

Nanotechnology

Volumn 21, Issue 4, 2010, Pages

  Shin, Dong Hee ^a   Kim, Sung ^a   Hong, Seung Hui ^a   Choi, Suk Ho ^a   Kim, Kyung Joong ^b  

^a Kyung Hee University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICA; GROWTH BEHAVIOR; OXYGEN CONTENT; P-TYPE SI; SI-RICH OXIDES; SILICA NANO WIRES; UNIFORM DISTRIBUTION; VAPOR-LIQUID-SOLID MECHANISM;

AMORPHOUS SILICON; NANOWIRES; OXYGEN; SILICA; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 73949134597     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/4/045604     Document Type: Article

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