VLS growth of SiOx nanowires with a stepwise nonuniformity in diameter

Journal of Applied Physics

Volumn 109, Issue 8, 2011, Pages

  Huang, Shengli ^a   Wu, Yan ^a,b   Zhu, Xianfang ^a,c,d,e   Li, Lunxiong ^a   Wang, Zhanguo ^c   Wang, Lianzhou ^a,d   Lu, Gaoqing ^a,d  

^a XIAMEN UNIVERSITY   (China)

^b JIMEI UNIVERSITY   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

^d UNIVERSITY OF QUEENSLAND   (Australia)

^e INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROLLED GROWTH; GAS FLOWS; NONUNIFORMITY; PRECISE CONTROL; RIPENING EFFECTS; VAPOR-LIQUID-SOLID MECHANISM; VLS GROWTH;

SILICON COMPOUNDS;

NANOWIRES;

EID: 79955726815     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3574398     Document Type: Article

References (24)

1. J. H. Kim, H. J. Woo, C. K. Kim, and C. S. Yoon, Nanotechnology 20, 235306 (2009). 10.1088/0957-4484/20/23/235306
2. H. Nishikawa, T. Shiroyama, R. Nakamura, Y. Ohiki, K. Nagasawa, and Y. Hama, Phys. Rev. B 45, 586 (1992). 10.1103/PhysRevB.45.586
3. O. Hayden, R. Agarwal, and W. Lu, Nanotoday 3, 12 (2008). 10.1016/S1748-0132(08)70061-6
4. R. W. Bogue, Sens. Rev. 24, 253 (2004). 10.1108/02602280410545362
5. S. Kodambaka, J. B. Hannon, R. M. Tromp, and F. M. Ross, Nano Lett. 6, 1292 (2006). 10.1021/nl060059p (Pubitemid 44013497)
6. J. B. Hannon, S. Kodambaka, F. M. Ross, and R. M. Tromp, Nature 440, 69 (2006). 10.1038/nature04574 (Pubitemid 43336267)
7. J. L. Elechiguerra, J. A. Manriquez, and M. J. Yacaman, Appl. Phys. A 79, 461 (2004). 10.1007/s00339-004-2597-y
8. Z. W. Pan, Z. R. Dai, L. Xu, S. T. Lee, and Z. L. Wang, J. Phys. Chem. B 105, 2507 (2001). 10.1021/jp004253q (Pubitemid 35372828)
9. J. Q. Hu, Y. Jiang, X. M. Meng, C. S. Lee, and S. T. Lee, Chem. Phys. Lett. 367, 339 (2003). 10.1016/S0009-2614(02)01697-4
10. J. Zhang, F. Jian, Y. Yang, and J. Li, J. Cryst. Growth 307, 76 (2007). 10.1016/j.jcrysgro.2007.06.003 (Pubitemid 47301908)
11. Z. Zhang, G. Ramanath, P. M. Ajayan, D. Goldberg, and Y. Bando, Adv. Mater. 13, 197 (2001). 10.1002/1521-4095(200102)13:31.0.CO;2-I
12. S. H. Li, X. F. Zhu, and Y. P. Zhao, J. Phys. Chem B 108, 17032 (2004). 10.1021/jp048418x
13. F. M. Ross, Rep. Prog. Phys. 73, 114501 (2010). 10.1088/0034-4885/73/11/ 114501
14. Z. W. Pan, S. Dai, D. B. Beach, and D. H. Lowndes, Nano Lett. 3, 1279 (2003). 10.1021/nl0343203 (Pubitemid 37206078)
15. J. Albuschies, M. Baus, O. Winkler, B. Hadam, B. Spangenberg, and H. Kurz, Microelectron. Eng. 83, 1530 (2006). 10.1016/j.mee.2006.01.145
16. H. F. Yan, Y. J. Xing, Q. L. Hang, D. P. Yu, Y. P. Wang, J. Xu, Z. H. Xi, and S. Q. Feng, Chem. Phys. Lett. 323, 224 (2000). 10.1016/S0009-2614(00)00519- 4
17. Y. J. Xing, Z. H. Xi, D. P. Yu, Q. L. Hang, H. F. Yan, S. Q. Feng, and Z. Q. Xue, Chin. Phys. Lett. 19, 240 (2002). 10.1088/0256-307X/19/2/331
18. H. W. Kim and S. H. Shim, Appl. Surf. Sci. 253, 3664 (2007). 10.1016/j.apsusc.2006.07.083 (Pubitemid 46123713)
19. A. Lugstein, Y. J. Hyun, M. Steinmair, B. Dielacher, G. Hauer, and E. Bertagnolli, Nanotechnology 19, 485606 (2008). 10.1088/0957-4484/19/48/485606
20. R. H. Vegter and G. den Ouden, J. Mater. Sci. 33, 4525 (1998). 10.1023/A:1004400318343
21. X. F. Zhu and Z. G. Wang, Int. J. Nanotechnology 3, 492 (2006). 10.1504/IJNT.2006.011175 (Pubitemid 46019492)
22. X. F. Zhu, J. Phys.: Condens. Matter 15, L253 (2003). 10.1088/0953-8984/15/17/101
23. G. S. Doerk, N. Ferralis, C. Carraro, and R. Maboudian, J. Mater. Chem. 18, 5376 (2008). 10.1039/b811535d
24. J. Bae, N. N. Kulkarni, J. P. Zhou, J. G. Ekerdt, and C. K. Shih, J. Cryst. Growth 310, 4407 (2008). 10.1016/j.jcrysgro.2008.06.084