First principle study on the electronic structure of fluorine-doped SnO2

Solid State Communications

Volumn 149, Issue 13-14, 2009, Pages 527-531

  Xu, Jian ^a   Huang, Shuiping ^a,b   Wang, Zhanshan ^a  

^a TONGJI UNIVERSITY   (China)

^b NINGBO UNIVERSITY   (China)

Author keywords

A. SnO2; B. Fluorine doped; C. Electronic structure; E. First principles

Indexed keywords

CHARGE CARRIERS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FLUORINE; LOCAL DENSITY APPROXIMATION; PROGRAMMING THEORY;

A. SNO2; B. FLUORINE-DOPED; BAND GAPS; C. ELECTRONIC STRUCTURE; DENSITY FUNCTIONAL; DENSITY OF STATE; E. FIRST PRINCIPLES; EFFECTIVE MASS; ENERGY LEVELS; FIRST-PRINCIPLE STUDIES; HIGHER FREQUENCIES; LOCAL DENSITIES; OPTICAL ABSORPTION EDGES; PLANE WAVES; PSEUDOPOTENTIAL METHODS; VALENCE ELECTRONS;

DENSITY FUNCTIONAL THEORY;

EID: 59649093529     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.01.010     Document Type: Article

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