1/f noise characterization of amorphous/nanocrystalline silicon bilayer thin-film transistors

Solid-State Electronics

Volumn 51, Issue 5, 2007, Pages 726-731

  Hatzopoulos, A T ^a   Arpatzanis, N ^a   Tassis, D H ^a   Dimitriadis, C A ^a   Templier, F ^b   Oudwan, M ^b   Kamarinos, G ^c  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b CEA LETI   (France)

^c IMEP LAHC   (France)

Author keywords

Amorphous silicon; Nanocrystalline silicon; Noise; TFTs

Indexed keywords

AMORPHOUS SILICON; DRAIN CURRENT; NANOCRYSTALLINE SILICON; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SIGNAL NOISE MEASUREMENT; SPURIOUS SIGNAL NOISE;

CHANNEL LENGTH; FREQUENCY NOISE; HOOGE'S MOBILITY; TRAP DENSITY;

THIN FILM TRANSISTORS;

EID: 34248580493     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.02.025     Document Type: Article

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