X-ray diffraction analysis of step-graded InxGa1-xAs buffer layers grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 323, Issue 1, 2011, Pages 17-20

  Lin, Hai ^a   Huo, Yijie ^a   Rong, Yiwen ^a   Chen, Robert ^a   Kamins, Theodore I ^a   Harris, James S ^a  

^a Stanford University   (United States)

Author keywords

High resolution X ray diffraction; InGaAs buffer; Molecular beam epitaxy; Reciprocal space mapping

Indexed keywords

CRYSTAL QUALITIES; CRYSTALLINE QUALITY; DIFFRACTION PEAKS; GAAS; GROWTH METHOD; HIGH RESOLUTION X RAY DIFFRACTION; IN-SITU ANNEALING; INGAAS BUFFER; LATERAL CORRELATION LENGTH; LATERAL DIRECTIONS; LOW TEMPERATURES; QUALITY IMPROVEMENT; RECIPROCAL SPACE MAPPING; TEM;

BUFFER LAYERS; DIFFRACTION; EPITAXIAL GROWTH; GALLIUM; MOLECULAR BEAM EPITAXY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS;

MOLECULAR BEAMS;

EID: 79957972534     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.11.173     Document Type: Article

References (6)

1. Y. Huo, H. Lin, Y. Rong, M. Makarova, T.I. Kamins, J. Vuckovic, J.S. Harris, in: Proceedings of the Conference on Lasers and Electro-Optics/ International Quantum Electronics Conference, 2009.
2. Y. Hoshina, A. Yamada, and M. Konagai Jpn. J. Appl. Phys. 48 2009 111102
3. M.V. Fischetti, and S.E. Laux J. Appl. Phys. 80 1996 2234
4. D Lee, M.S Park, Z Tang, H Luo, R Beresford, and C.R Wie J. Appl. Phys. 101 2007 063523
5. M Erdtmann, and T.A Langdo J. Mater. Sci.: Mater. Electron 17 2006 137
6. C.H Jang, M.R Sardela Jr., S.-H Kim, Y.-J Song, and N.-E Lee Appl. Surf. Sci. 252 2006 5326