Electron backscattering from stacking faults in SiC by means of ab initio quantum transport calculations

Physical Review B - Condensed Matter and Materials Physics

Volumn 85, Issue 23, 2012, Pages

  Deretzis, I ^a   Camarda, M ^a   La Via, F ^a   La Magna, A ^a  

^a CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84862695018     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.85.235310     Document Type: Article

References (22)

1. W. J. Choyke, H. Matsunami, and G. Pensl, eds., Silicon Carbide: Recent Major Advances (Springer, Berlin, 2005).
2. P. Pirouz, D. J. H. Cockayne, N. Sumida, P. Hirsch, and A. R. Lang, R. Soc. London Proc., Ser. A 1364-5021 10.1098/rspa.1983.0034 386, 241 (1983).
3. H. Gottschalk, G. Patzer, and H. Alexander, Phys. Status Solidi Appl. Res. PSSABA 0031-8965 10.1002/pssa.2210450125 45, 207 (1978).
4. S. Takeuchi, K. Suzuki, K. Maeda, and H. Iwanaga, Philos. Mag. A PMAADG 0141-8610 10.1080/01418618408244220 50, 171 (1984).
5. H. Iwata, U. Lindefelt, S. berg, and P. R. Briddon, Phys. Rev. B 1098-0121 10.1103/PhysRevB.65.033203 65, 033203 (2001).
6. U. Lindefelt, H. Iwata, S. berg, and P. R. Briddon, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.67.155204 67, 155204 (2003).
7. M. Camarda, A. La Magna, P. Delugas, and F. La Via, Appl. Phys. Express 1882-0778 10.1143/APEX.4.025802 4, 025802 (2011).
8. M. Skowronski and S. Ha, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2159578 99, 011101 (2006). (Pubitemid 43109120)
9. M. D. Stiles and D. R. Hamann, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.41.5280 41, 5280 (1990).
10. I. Deretzis, G. Fiori, G. Iannaccone, and A. La Magna, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.81.085427 81, 085427 (2010).
11. S. Datta, Electronic Transport in Mesoscopic Systems, edited by, A. B. Haroon Ahmed, and, Michael Pepper, (Cambridge University Press, Cambridge, 1995).
12. M. Y. Chou, M. L. Cohen, and S. G. Louie, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.32.7979 32, 7979 (1985).
13. J. M. Soler, E. Artacho, J. D. Gale, A. García, J. Junquera, P. Ordejón, and D. Sánchez-Portal, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/14/11/302 14, 2745 (2002). (Pubitemid 34288362)
14. J. P. Perdew and A. Zunger, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.23.5048 23, 5048 (1981).
15. N. Troullier and J. L. Martins, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.43.1993 43, 1993 (1991).
16. M. P. Lopez Sancho, J. M. Lopez Sancho, J. M. L. Sancho, and J. Rubio, J. Phys. F JPFMAT 0305-4608 10.1088/0305-4608/15/4/009 15, 851 (1985).
17. I. Deretzis and A. La Magna, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.84.235426 84, 235426 (2011).
18. G. Feng, J. Suda, and T. Kimoto, Appl. Phys. Lett. 0003-6951 10.1063/1.2937097 92, 221906 (2008).
19. J. Takahashi, N. Ohtani, M. Katsuno, and S. Shinoyama, J. Cryst. Growth JCRGAE 0022-0248 10.1016/S0022-0248(97)00289-3 181, 229 (1997).
20. A. Fissel, Phys. Rep. PRPLCM 0370-1573 10.1016/S0370-1573(02)00632-4 379, 149 (2003). (Pubitemid 36571124)
21. A. Konar, T. Fang, N. Sun, and D. Jena, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3543846 98, 022109 (2011).
22. J. Eriksson, M. H. Weng, F. Roccaforte, F. Giannazzo, S. Leone, and V. Raineri, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3211965 95, 081907 (2009).