First principles investigation on the modifications of the 4H-SiC band structure due to the (4, 4) and (3, 5) stacking faults

Applied Physics Express

Volumn 4, Issue 2, 2011, Pages

  Camarda, Massimo ^a   La Magna, Antonino ^a   Delugas, Pietro ^b   La Via, Francesco ^a  

^a CNR IMM   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; FIRST PRINCIPLE CALCULATIONS; FIRST-PRINCIPLES INVESTIGATIONS; FORMATION ENERGIES; GAP STATE; PHOTOLUMINESCENCE MEASUREMENTS; SPLIT-OFF BAND;

DEFECTS; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; EPITAXIAL FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

STACKING FAULTS;

EID: 79951650275     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.025802     Document Type: Article

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