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Volumn 22, Issue 21, 2012, Pages 10716-10724

Electronic structure and band gap engineering of CdTe semiconductor nanowires

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC RELAXATION; BAND ALIGNMENTS; BAND GAP ENGINEERING; CDTE; CDTE SEMICONDUCTOR; DENSITY-FUNCTIONAL TIGHT-BINDING; DICARBOXYLIC ACID; FORMATION ENERGIES; HIGHEST OCCUPIED MOLECULAR ORBITAL; HYDROGEN ATOMS; MOLECULAR STATE; OPTICAL GAP; SELF CONSISTENT CHARGES; SURFACE ATOMS; SURFACE STRAINS; TRIANGULAR CROSS-SECTIONS; TYPE II;

EID: 84862655944     PISSN: 09599428     EISSN: 13645501     Source Type: Journal    
DOI: 10.1039/c2jm16810c     Document Type: Article
Times cited : (33)

References (78)
  • 16
    • 33846979420 scopus 로고    scopus 로고
    • N. S. Lewis Science 2007 315 798 801
    • (2007) Science , vol.315 , pp. 798-801
    • Lewis, N.S.1
  • 34
    • 9944226252 scopus 로고    scopus 로고
    • X. Wu Sol. Energy 2004 77 803 814
    • (2004) Sol. Energy , vol.77 , pp. 803-814
    • Wu, X.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.