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Volumn 22, Issue 21, 2012, Pages 10716-10724
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Electronic structure and band gap engineering of CdTe semiconductor nanowires
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC RELAXATION;
BAND ALIGNMENTS;
BAND GAP ENGINEERING;
CDTE;
CDTE SEMICONDUCTOR;
DENSITY-FUNCTIONAL TIGHT-BINDING;
DICARBOXYLIC ACID;
FORMATION ENERGIES;
HIGHEST OCCUPIED MOLECULAR ORBITAL;
HYDROGEN ATOMS;
MOLECULAR STATE;
OPTICAL GAP;
SELF CONSISTENT CHARGES;
SURFACE ATOMS;
SURFACE STRAINS;
TRIANGULAR CROSS-SECTIONS;
TYPE II;
ADSORPTION;
CADMIUM TELLURIDE;
CARBOXYLIC ACIDS;
DANGLING BONDS;
ELECTRONIC PROPERTIES;
ELECTRONIC STRUCTURE;
ENERGY GAP;
HYBRID SYSTEMS;
PASSIVATION;
QUANTUM CHEMISTRY;
NANOWIRES;
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EID: 84862655944
PISSN: 09599428
EISSN: 13645501
Source Type: Journal
DOI: 10.1039/c2jm16810c Document Type: Article |
Times cited : (33)
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References (78)
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