In-situ oxygen x-ray absorption spectroscopy investigation of the resistance modulation mechanism in LiNbO 2 memristors

Applied Physics Letters

Volumn 100, Issue 18, 2012, Pages

  Greenlee, Jordan D ^a   Petersburg, Cole F ^b   Laws Calley, W ^a   Jaye, Cherno ^c   Fischer, Daniel A ^c   Alamgir, Faisal M ^b   Alan Doolittle, W ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PERFORMANCE; IN-SITU; ION DOPANTS; MEMORY APPLICATIONS; MEMRISTOR; NEAR EDGE X-RAY ABSORPTION FINE STRUCTURE SPECTROSCOPIES; NEUROMORPHIC COMPUTING; RESISTANCE MODULATION; RESISTANCE RESPONSE;

LITHIUM; MEMRISTORS; RESISTORS; X RAY ABSORPTION FINE STRUCTURE SPECTROSCOPY;

PASSIVE FILTERS;

EID: 84862541369     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4709422     Document Type: Article

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