Diameter and composition modulated bismuth telluride nanowires by galvanic displacement reaction of segmented NiFe nanowires

Electrochimica Acta

Volumn 75, Issue , 2012, Pages 201-207

  Suh, Hoyoung ^a   Jung, Hyunsung ^b   Hangarter, Carlos M ^b   Park, Hosik ^b   Lee, Youngin ^c   Choa, Yongho ^c   Myung, Nosang V ^b   Hong, Kimin ^a  

^a Chungnam National University   (South Korea)

^b University of California Riverside   (United States)

^c Hanyang University   (South Korea)

Author keywords

Bismuth telluride; Dumbbell like structure; Galvanic displacement reaction; Nanowires; NiFe

Indexed keywords

BISMUTH TELLURIDE; DIAMETER VARIATION; DUMBBELL LIKES; FE CONTENT; GALVANIC DISPLACEMENT; NIFE; SEGMENT LENGTHS;

BISMUTH; BISMUTH COMPOUNDS; REACTION RATES; SUBSTITUTION REACTIONS;

NANOWIRES;

EID: 84862537905     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2012.04.090     Document Type: Article

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