First-principles calculation and experimental study of Si-doped β-Ga2O3

Wuli Xuebao/Acta Physica Sinica

Volumn 60, Issue 3, 2011, Pages

  Zhang, Yi Jun ^a   Yan, Jin Liang ^a   Zhao, Gang ^a   Xie, Wan Feng ^a  

^a LUDONG UNIVERSITY   (China)

Author keywords

Density function; First principles; Si doped Ga2O3; Ultra soft pseudo potential

Indexed keywords

EID: 79953669941     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (36)

1. Tippins H H 1965 Phys. Rev. 140 A316
2. Ueda U, Hosono H, Waseda R, Kawazoe H 1997 Appl. Phys. Lett. 71 933
3. Kenji Y 2004 Solid. State. Commun. 131 739
4. Litimein F, Rached D, Khenata R, Baltache H 2009 J. Alloy. Compd. 20516 9
5. Hai B, Xu F Q, 2004 Chin. Phys. 13 2126
6. Ye H G, Chen G De, Zhu Y Z, Lü H M 2007 Chin. Phys. 16 3803
7. Guang Q P, Chang T X, Yong J D B, Wu T W, Jun X 2008 Scripta. Materialia. 58 943
8. Xing H Y, Fan G H, Zhang Y, Zhao D G 2009 Acta Phys. Sin. 58 450 (in Chinese)
9. Wang Z J, Li S C, Wang L Y 2009 Chin. Phys. B 18 2992
10. Tang X, Lü H F, Ma C Y, Zhao J J, Zhang Q Y 2008 Acta Phys. Sin. 57 1066 (in Chinese)
11. Yang Z J, Guo Y D, Li J, Liu J C, Dai W, Cheng X L, Yang X D 2010 Chin. Phys. B 19 077102
12. Shigeo O, Norihito S Z K, Naoki A, Masahiko T, Takamasa S, Kazuo N, Toetsu S 2008 Thin. Solid. Films. 516 5763
13. Víllora E G., Shimamura K, Yoshikawa Y, Ujiie T, Aoki K 2008 Appl. Phys. Lett. 92 202120
14. Kiyoshi S, Encarnación G. V, Takekazu U, Kazuo A 2008 Appl. Phys. Lett. 92 201914
15. M Yamaga 2003 Phys. Rev. B 68 155207
16. Takakura K, Koga D, Ohyama H, Rafi J M, Kayamoto Y, Shibuya M, Yamamoto H, Vanhellemont J 2009 Physica B 404 4854
17. He H Y, Orlando R, Miguel A, Blanco R P 2006 Phys. Rev. B 74 195123
18. Zhang J G, Xiao C Q, Wu F 2005 Journal. of Synthetic. Craystals 34 67 (in Chinese)
19. Xing H Y, Fan G H, Zhou T M 2009 Acta Phys. Sin. 58 3324 (in Chinese)
20. Liu Q, Cheng X L, Yang X D, Fan Y H 2009 Acta Phys. Sin. 58 2684 (in Chinese)
21. Deng Z H, Yan J F, Zhang F C, Wang X. W, Xu J P, Zhang Z Y 2007 Acta. Photonica Sinica 36 110
22. Keiji W, Masatoshi S, Hideaki T 1999 J. Electroanal. Chem. 473 250
23. Wang Q X, Xiong Z H, Rao J P, Dai J N, Le S P, Wang G P, Jiang F Y 2007 Chnese. Journal. of Semiconductors 28 698 (in Chinese)
24. Vanderbilt D 1990 Phys. Rev. B 41 7892
25. Feng J, Xiao B, Chen J C, Zhou T C 2009 Solid State Sci. 11 259
26. Ouyang X F, Shi S I, Ouyang C Y, Jiang D Y, Liu D S, Ye Z Q, Lei M S 2007 Chin. Phys. 16 3042
27. Gagarin S G, Kolbanovskii Y A, Polak L S 1972 Theoretical And Experimental Chemistry 8 216
28. Monkhorst H J, Pack J D 1976 Phys. Rev. B 13 5188
29. Pack J D, Monkhorst H J 1977 Phys. Rev. B 16 1748
30. Bnite L, Gouurier D, Minot C J 1994 Solid State. Chem. 113 420
31. Albanesi E A, Sferco S J, Lefebvre I, Allan G, Hollinger G 1992 Phys. Rev. 46 13260
32. Xing H Y, Fan G H, Zhao D G, He M, Zhang Y, Zhou T M, 2008 Acta Phys. Sin. 57 6513 (in Chinese)
33. Yuan Y 2006 MS Thesis (Zhejiang: Zhejiang University)(in Chinese)
34. Feng J, Xiao B, Chen J C, Zhou T C 2009 Solid State Communications 149 1569
35. Shen Y B, Zhou X, Xu M, Ding Y C, Duan M Y, Linghu R F, Zhu W J 2007 Acta Phys. Sin. 56 3440 (in Chinese)
36. Chen K, Fan G. H, Zhang Y 2008 Acta. Phys. Sini. 57 1054 (in Chinese)