The effect of electronic orbital interactions on p-type doping tendency in ZnO series: First-principles calculations

Chinese Physics

Volumn 16, Issue 12, 2007, Pages 3815-3819

  Zhang, Fang Ying ^a   You, Jian Qiang ^a   Zeng, Zhi ^b   Zhong, Guo Hua ^b  

^a FUDAN UNIVERSITY   (China)

^b INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

Electronic structures; Optical properties; P type doping tendency; Pseudopotential plane wave method

Indexed keywords

DOPING (ADDITIVES); ELECTRONIC STRUCTURE; MOLECULAR INTERACTIONS; OPTICAL PROPERTIES; SUBSTITUTION REACTIONS;

ATOMIC NUMBERS; P-TYPE DOPING TENDENCY; PSEUDOPOTENTIAL PLANE-WAVE METHODS; ZINC-BASED II-VI SEMICONDUCTORS;

ZINC OXIDE;

EID: 37549046785     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/16/12/043     Document Type: Article

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