SCOPUS 정보 검색 플랫폼

Chinese Physics B

Volumn 21, Issue 6, 2012, Pages

The effects of substrate temperature on ZnO-based resistive random access memory devices

(5) Zhao, Jian Wei a Liu, Feng Juan a Huang, Hai Qin a Hu, Zuo Fu a Zhang, Xi Qing a

a BEIJING JIAOTONG UNIVERSITY (China)

Author keywords

magnetron sputtering; resistive switching devices; ZnO

Indexed keywords

FORMING PROCESS; HIGH-RESISTANCE STATE; HIGH-VOLTAGES; INITIAL STATE; LOW-RESISTANCE STATE; MULTI-STEP; OPERATION VOLTAGE; RADIO FREQUENCY MAGNETRON SPUTTERING; RESISTANCE RATIO; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RETENTION PROPERTIES; ROOM TEMPERATURE; SUBSTRATE TEMPERATURE; SWITCHING CYCLES; ZNO; ZNO THIN FILM;

MAGNETRON SPUTTERING; SWITCHING SYSTEMS;

ZINC OXIDE;

EID: 84862513966 PISSN: 16741056 EISSN: None Source Type: Journal
DOI: 10.1088/1674-1056/21/6/065201 Document Type: Article

Times cited : (17)

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