Efficient charge extraction out of nanoscale schottky contacts to CdS nanowires

Nano Letters

Volumn 12, Issue 6, 2012, Pages 2705-2709

  Dufaux, Thomas ^a   Burghard, Marko ^a   Kern, Klaus ^a,b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b EPFL   (Switzerland)

Author keywords

Cadmium sulfide; nanowire; recombination; scanning photocurrent microscopy; Schottky contact

Indexed keywords

BULK DEVICES; CDS NANOWIRES; CHARGE CARRIER EXTRACTION; CHARGE EXTRACTION; CHARGE RECOMBINATIONS; DEVICE APPLICATION; ELECTRON DIFFUSION LENGTH; GOLD CONTACTS; NANO SCALE; NANO-STRUCTURED; NANOSCALE DIMENSIONS; PHOTOCURRENT MEASUREMENT; PHOTOVOLTAIC; RECOMBINATION; SCHOTTKY CONTACTS; SEMICONDUCTOR NANOSTRUCTURES; THEORETICAL MODELING;

CADMIUM COMPOUNDS; NANOTECHNOLOGY; NANOWIRES; OPTOELECTRONIC DEVICES; PHOTOCURRENTS;

CADMIUM SULFIDE;

CADMIUM DERIVATIVE; CADMIUM SELENIDE; NANOMATERIAL; SELENIUM DERIVATIVE;

ARTICLE; CHEMISTRY; ELECTRODE; ELECTRON TRANSPORT; EQUIPMENT; EQUIPMENT DESIGN; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

CADMIUM COMPOUNDS; ELECTRODES; ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; NANOSTRUCTURES; PARTICLE SIZE; SELENIUM COMPOUNDS; SEMICONDUCTORS;

EID: 84862300083     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl204193y     Document Type: Article

References (25)

1. Tian, B.; Zheng, X.; Kempa, T.; Fang, Y.; Yu, N.; Yu, G.; Huang, J.; Lieber, C. M. Nature 2007, 449, 885
2. Hayden, O.; Agarwal, R.; Lieber, C. M. Nat. Mater. 2006, 5, 352
3. Jie, J. S.; Zhang, W. J.; Jiang, Y.; Meng, X. M.; Li, Y. Q.; Lee, S. T. Nano Lett. 2006, 6 (9) 1887
4. Soci, C.; Zhang, A.; Xiang, B.; Dayeh, S. A.; Aplin, D. P. R.; Park, J.; Bao, X. Y.; Lo, Y. H.; Wang, D. Nano Lett. 2007, 7 (4) 1003
5. Chen, R. S.; Chen, H. Y.; Lu, C. Y.; Chen, K. H.; Chen, C. P.; Chen, L. C.; Yang, Y. J. Appl. Phys. Lett. 2007, 91, 223106
6. Zhu, J.; Yu, Z.; Burkhard, G. F.; Hsu, C.-M.; Connor, S. T.; Xu, Y.; Wang, Q.; McGehee, M.; Fan, S.; Cui, Y. Nano Lett. 2009, 9 (1) 279
7. Fan, Z.; Razavi, H.; Do, J.-W.; Moriwaki, A.; Ergen, O.; Chueh, Y.-L.; Leu, P. W.; Ho, J. C.; Takahashi, T.; Reichertz, L. A.; Neale, S.; Yu, K.; Wu, M.; Ager, J. W.; Javey, A. Nat. Mater. 2009, 8, 648
8. Dufaux, T.; Boettcher, J.; Burghard, M.; Kern, K Small 2010, 6, 1868
9. Soci, C.; Zhang, A.; Bao, X. Y.; Kim, H.; Lo, Y.; Wang, D. J. Nanosci. Nanotechnol. 2010, 10, 1
10. Balasubramanian, K.; Burghard, M.; Kern, K.; Scolari, M.; Mews, A. Nano Lett. 2005, 5, 507-510
11. Gu, Y.; Romankiewicz, J. P.; David, J. K.; Lensch, J. L.; Lauhon, L. J. Nano Lett. 2006, 6 (5) 948
12. Kelzenberg, M. D.; Tuner-Evans, D. B.; Kayes, B. M.; Filler, M. A.; Putnam, M. C.; Lewis, N. S.; Atwater, H. A. Nano Lett. 2008, 8 (2) 710
13. Lee, E. J. H.; Balasubramanian, K.; Dorfmueller, J.; Vogelgesang, R.; Fu, N.; Mews, A.; Burghard, M.; Kern, K. Small 2007, 3 (12) 2038
14. Lee, E. J. H.; Balasubramanian, K.; Weitz, R. T.; Burghard, M.; Kern, K. Nat. Nanotechnol. 2008, 3, 486
15. Dufaux, T.; Dorfmüller, J.; Vogelgesang, R.; Burghard, M.; Kern, K App. Phys. Lett. 2010, 97, 161110
16. Panayotatos, P.; Card, H. C. Sol. Stat. Electronics 1979, 23, 41
17. Oktik, S.; Russell, G. J.; Woods, J. Semicond. Sci. Technol. 1987, 2, 661
18. Gu, Y.; Romankiewicz, J. P.; David, J. K.; Lensch, J. L.; Lauhon, L. J.; Kwak, E.-S.; Kwak, T. W.; Odom, T. W. J. Vac. Sci. Technol., B 2006, 24, 2172
19. Fu, D.; Zou, J.; Wang, K.; Zhang, R.; Yu, D.; Wu, J. Nano Lett. 2011, 11 (9) 3809
20. Sze, S. M.; Ng, K. K. Physics of Semiconductor Devices; John Wiley & Sons: Hoboken, NJ, 2006.
21. Oskooi, A. F.; Roundy, D.; Ibanescu, M.; Bermel, P.; Joannopoulos, J. D.; Johnson, S. G. Comput. Phys. Commun. 2010, 181, 687
22. Madelung, O. Semiconductors: Data Handbook; Springer-Verlag: Berlin, Germany, 2004.
23. Frank, A. J.; Glenis, S.; Nelson, A. J. J. Phys. Chem. 1989, 93 (9) 3818
24. Van de Walle, C. G.; Neugebauer, J. Nature 2003, 423, 626
25. Ma, R.-M.; Dai, L.; Qin, G.-G. Nano Lett. 2007, 7 (4) 868