Comparison between bulk and nanoscale copper-silicide: Experimental studies on the crystallography, chemical, and oxidation of copper-silicide nanowires on Si(001)

Journal of Applied Physics

Volumn 111, Issue 10, 2012, Pages

  Ng, P K ^a   Fisher, B ^b   Low, K B ^c   Joshi Imre, A ^b   Bode, M ^b,d   Lilley, C M ^a  

^a University of Illinois at Chicago   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^d UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; EXPERIMENTAL STUDIES; HIGH-VACUUM CONDITIONS; IN-SITU; NANO SCALE; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SELF-ASSEMBLED; SI(0 0 1);

CHEMICAL PROPERTIES; COPPER; CRYSTALLOGRAPHY; SCANNING ELECTRON MICROSCOPY; SILICIDES; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

NANOWIRES;

EID: 84862125113     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4712536     Document Type: Conference Paper

References (33)

1. C. Steinbruchel and B. L. Chin, Copper Interconnect Technology (SPIE, 2001).
2. A. A. Istratov, C. Flink, H. Hieslmair, E. R. Weber, and T. Heiser, Intrinsic diffusion coefficient of interstitial copper in silicon., Phys. Rev. Lett. 81, 1243 (1998). 10.1103/PhysRevLett.81.1243
3. M. Setton, J. Van der Spiegel, and B. Rothman, Copper silicide formation by rapid thermal processing and induced room-temperature Si oxide growth., Appl. Phys. Lett. 57, 357-359 (1990). 10.1063/1.104105
4. A. Cros, M. O. Aboelfotoh, and K. N. Tu, Formation, oxidation, electronic, and electrical properties of copper silicides., J. Appl. Phys. 67, 3328-3336 (1990). 10.1063/1.345369
5. G. Das, Precipitation of copper in silicon., J. Appl. Phys. 44, 4459-4467 (1973). 10.1063/1.1661982
6. A. A. Istratov and E. R. Weber, Physics of copper in silicon., J. Electrochem. Soc. 149, G21-G30 (2002). 10.1149/1.1421348
7. S. Hymes, K. S. Kumar, S. P. Murarka, P. J. Ding, W. Wang, and W. A. Lanford, Thermal stability of copper silicide passivation layers in copper-based multilevel interconnects., J. Appl. Phys. 83, 4507-4512 (1998). 10.1063/1.367235
8. H. H. Busta and H. A. Waggener, Precipitation-induced currents and generation-recombination currents in intentionally contaminated silicon P*N junctions., J. Electrochem. Soc. 124, 1424-1429 (1977). 10.1149/1.2133667
9. E. Roduner, Size matters: Why nanomaterials are different., Chem. Soc. Rev. 35, 583-592 (2006). 10.1039/b502142c
10. R. S. Wagner and W. C. Ellis, Vapor-liquid-solid mechanism of single crystal growth., Appl. Phys. Lett. 4, 89-94 (1964). 10.1063/1.1753975
11. 3Si., Appl. Phys. Lett. 56, 2519-2521 (1990). 10.1063/1.103260
12. C. Zheng and G. Changzhi, Nanofabrication challenges for NEMS., in 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS'06 (IEEE, 2006), pp. 607-610.
13. L. R. Harriott, Limits of lithography., Proc. IEEE 89, 366-374 (2001). 10.1109/5.915379
14. M. J. Kelly, Intrinsic top-down unmanufacturability., Nanotechnology 22, 245303 (2011). 10.1088/0957-4484/22/24/245303
15. Y. Chang, M. L. Lye, and H. C. Zeng, Large-scale synthesis of high-quality ultralong copper nanowires., Langmuir 21, 3746-3748 (2005). 10.1021/la050220w
16. M. E. T. Molares, V. Buschmann, D. Dobrev, R. Neumann, R. Scholz, I. U. Schuchert, and J. Vetter, Single-crystalline copper nanowires produced by electrochemical deposition in polymeric ion track membranes., Adv. Mater. 13, 62-65 (2001). 10.1002/1521-4095(200101)13:1<62::AID-ADMA62>3.0.CO;2-7
17. G. Tao, Electrochemical synthesis of copper nanowires., J. Phys.: Condens. Matter 14, 355 (2002). 10.1088/0953-8984/14/3/306
18. Y. Konishi, M. Motoyama, H. Matsushima, Y. Fukunaka, R. Ishii, and Y. Ito, Electrodeposition of Cu nanowire arrays with a template., J. Electroanal. Chem. 559, 149-153 (2003). 10.1016/S0022-0728(03)00157-8
19. Y. T. Pang, G. W. Meng, Y. Zhang, Q. Fang, and L. D. Zhang, Copper nanowire arrays for infrared polarizer., Appl. Phys. A 76, 533-536 (2003). 10.1007/s00339-002-1483-8
20. Z. Liu and Y. Bando, A novel method for preparing copper nanorods and nanowires., Adv. Mater. 15, 303-305 (2003). 10.1002/adma.200390073
21. H. Choi and S.-H. Park, Seedless growth of free-standing copper nanowires by chemical vapor deposition., J. Am. Chem. Soc. 126, 6248-6249 (2004). 10.1021/ja049217+
22. P.-K. Ng, B. Fisher, M. Bode, and C. M. Lilley, Self assembled Cu nanowires on vicinal Si(001) by E-beam evaporation method., Nanotechnology, 2011 11th IEEE Conference (IEEE-NANO, Portland, OR, 2011), p. 150-154.
23. P.-K. Ng, B. Fisher, K.-B. Low, A. Joshi-Imre, M. Bode, and C. M. Lilley, High resolution analysis of self assembled Cu nanowires on vicinal Si(001)., Nanotechnology, 2011 11th Conference (IEEE-NANO, Portland, OR, 2011), p. 150-154.
24. A. Tao, F. Kim, C. Hess, J. Goldberger, R. He, Y. Sun, Y. Xia, and P. Yang, Langmuir-Blodgett silver nanowire monolayers for molecular sensing using surface-enhanced Raman spectroscopy., Nano Lett. 3, 1229-1233 (2003). 10.1021/nl0344209
25. K. R. Roos, High temperature self-assembly of Ag nanowires on vicinal Si(001)., J. Phys.: Condens. Matter 17, S1407 (2005). 10.1088/0953-8984/17/16/ 011
26. Q. Huang, C. M. Lilley, and M. Bode, Surface scattering effect on the electrical resistivity of single crystalline silver nanowires self-assembled on vicinal Si (001)., Appl. Phys. Lett. 95, 103112 (2009). 10.1063/1.3216836
27. B. Stahlmecke, F. J. M. z. Heringdorf, L. I. Chelaru, M. H. -v. Hoegen, G. Dumpich, and K. R. Roos, Electromigration in self-organized single-crystalline silver nanowires., Appl. Phys. Lett. 88, 053122 (2006). 10.1063/1.2172012
28. H. Okamoto, Cu-Si (copper-silicon)., J. Phase Equilib. 23, 281-282 (2002). 10.1361/105497102770331857
29. R. Olesinski and A. Gokhale, The Ag-Si (Silver-Silicon) system., J. Phase Equilib. 10 (6), 635-640 (1989). 10.1007/BF02877631
30. M. Aboelfotoh, Electrical transport in thin films of copper silicide., J. Appl. Phys. 70, 3382 (1991). 10.1063/1.349280
31. K. Holloway and P. M. Fryer, Tantalum as a diffusion barrier between copper and silicon., Appl. Phys. Lett. 57, 1736-1738 (1990). 10.1063/1.104051
32. 2 within (111) oriented Si in a molecular beam epitaxy system., Appl. Phys. Lett. 59, 3249 (1991). 10.1063/1.105747
33. Z. He, D. J. Smith, and P. A. Bennett, Endotaxial silicide nanowires., Phys. Rev. Lett. 93, 256102 (2004). 10.1103/PhysRevLett.93.256102