Nano scale phase separation in Au-Ge system on ultra clean Si(100) surfaces

Journal of Applied Physics

Volumn 111, Issue 10, 2012, Pages

  Rath, A ^a   Dash, J K ^a   Juluri, R R ^a   Schowalter, Marco ^b   Mueller, Knut ^b   Rosenauer, A ^b   Satyam, P V ^a  

^a INSTITUTE OF PHYSICS   (India)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE LENGTH; FORMING PHASE; GE FILMS; NANO-SCALE PHASE SEPARATION; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SI(100) SURFACE; SUBSTRATE SURFACE; SYSTEMATIC STUDY; THERMAL-ANNEALING; UHV CHAMBERS;

ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; PHASE SEPARATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SILICIDES;

SILICON;

EID: 84862118009     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4721666     Document Type: Conference Paper

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