Formation of aligned nanosilicide structures in a MBE-grown Au/Si(110) system: A real-time temperature-dependent TEM study

Journal of Physics Condensed Matter

Volumn 21, Issue 20, 2009, Pages

  Bhatta, Umananda M ^a   Dash, J K ^a   Roy, Anupam ^a,b   Rath, A ^a   Satyam, P V ^a  

^a INSTITUTE OF PHYSICS   (India)

^b DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AU FILMS; COOLED SYSTEMS; DIFFRACTION ANALYSIS; GOLD SILICIDES; HIGH RESOLUTIONS; HIGH TEMPERATURES; HIGHER TEMPERATURES; IN-SITU TRANSMISSIONS; LATTICE-MATCHING; MOLECULAR-BEAM EPITAXIES; NANO-AU; ROD-LIKE STRUCTURES; ROOM TEMPERATURES; SELECTED-AREA DIFFRACTIONS; SELECTED-AREA ELECTRON DIFFRACTION PATTERNS; SI(110); TEM; TIME TEMPERATURES; ULTRA-HIGH VACUUMS;

ASPECT RATIO; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; HOLOGRAPHIC INTERFEROMETRY; IN SITU PROCESSING; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GOLD;

EID: 65449179172     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/20/205403     Document Type: Article

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