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Volumn 135, Issue 1, 2012, Pages 174-180

Oxygen partial pressure effect on structural and electrical behavior of pulsed laser deposited Zn 0.98Co 0.02O thin films

(10) Sekhar, K C a Khodorov, A a Chahboun, A a,b Levichev, S a Almeida, A c Moreira, J Agostinho c Kamakshi, Koppole a Silva, C J R a Pereira, M a Gomes, M J M a

a UNIVERSITY OF MINHO (Portugal)

b ABDELMALEK ESSAADI UNIVERSITY (Morocco)

c UNIVERSITY OF PORTO (Portugal)

Author keywords

Co doped ZnO; Current voltage characteristics; Impedance spectroscopy; Photoluminescence; Raman scattering

Indexed keywords

ARRHENIUS; BULK EFFECT; CO-DOPED ZNO; COMPLEX IMPEDANCE SPECTROSCOPY; CONDUCTION MECHANISM; DIFFERENT SLOPES; ELECTRICAL BEHAVIORS; ELECTRONIC RELAXATION; EXPONENTIAL DEPENDENCE; FREE CARRIERS; IMPEDANCE ANALYSIS; IMPEDANCE SPECTROSCOPY; INTERSTITIAL DEFECTS; INVERSE TEMPERATURES; OXYGEN PARTIAL PRESSURE; STRUCTURAL AND ELECTRICAL PROPERTIES; TEMPERATURE INCREASE; THERMAL ACTIVATION; ZINC INTERSTITIALS;

COBALT COMPOUNDS; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; PARTIAL PRESSURE; PHOTOLUMINESCENCE; POSITIVE IONS; PRESSURE EFFECTS; PULSED LASER DEPOSITION; RAMAN SCATTERING; ZINC;

COBALT;

EID: 84861914123 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/j.matchemphys.2012.04.047 Document Type: Article

Times cited : (7)

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