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Vacuum

Volumn 85, Issue 2, 2010, Pages 160-163

Oxygen pressure and measurement temperature dependence of defects related bands in zinc oxide films

(3) Zhang, Dong a Wang, Changzheng a Zhang, Fengxia a

a LIAOCHENG UNIVERSITY (China)

Author keywords

Temperature dependent photoluminescence; Thin films; Zinc oxide

Indexed keywords

BAND EMISSION; BAND ENERGY; EMISSION PEAKS; OXYGEN PRESSURE; PREFERRED ORIENTATIONS; SHARP INCREASE; SINGLE CRYSTAL SILICON; STRUCTURAL AND OPTICAL PROPERTIES; TEMPERATURE DEPENDENCE; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; UV EMISSIONS; ZNO FILMS;

DEFECTS; OPTICAL PROPERTIES; OXYGEN; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; PULSED LASERS; SILICON WAFERS; SINGLE CRYSTALS; THIN FILMS; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 77956610701 PISSN: 0042207X EISSN: None Source Type: Journal
DOI: 10.1016/j.vacuum.2010.05.005 Document Type: Article

Times cited : (10)

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