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Volumn 23, Issue 25, 2012, Pages

The use of a Ga + focused ion beam to modify graphene for device applications

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE LATTICE; DEFECT LINES; DEVICE APPLICATION; ELECTRICAL MEASUREMENT; ETCHING CONDITION; INTEGRATED INTENSITIES; ION FLUENCES; LASER POLARIZATION; LINE DEFECTS; NANO-CARBON; PERIODIC ARRAYS; POLARIZED RAMAN SPECTROSCOPY; RAMAN D-BAND; SINGLE LAYER;

EID: 84861896964     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/25/255305     Document Type: Article
Times cited : (50)

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