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Journal of Non-Crystalline Solids

Volumn 358, Issue 12-13, 2012, Pages 1511-1515

Growth of germanium sulfide by hot wire chemical vapor deposition for nonvolatile memory applications

(4) Reso, D a Silinskas, M a Lisker, M b Burte, E P a

a OTTO VON GUERICKE UNIVERSITY (Germany)

b IHP (Germany)

Author keywords

Chalcogenides; Conformal filling; Ge S; Hot wire chemical vapor deposition; Programmable metallization cell

Indexed keywords

AMORPHOUS GERMANIUM; CONFORMAL FILLING; DEPOSITION TEMPERATURES; FOUR-ORDER; GE CONTENT; GE-S; GERMANIUM SULFIDE; HIGHER TEMPERATURES; HOT WIRE CHEMICAL VAPOR DEPOSITION; NON-VOLATILE MEMORY APPLICATION; PROGRAMMABLE METALLIZATION CELLS; RESISTIVE SWITCHING BEHAVIORS; STEP COVERAGE;

CHALCOGENIDES; CHEMICAL VAPOR DEPOSITION; DEPOSITION; GROWTH RATE; PROPYLENE; SULFUR; SULFUR COMPOUNDS; VAPORS; WIRE;

GERMANIUM;

EID: 84861848460 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2012.04.004 Document Type: Article

Times cited : (3)

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