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Volumn 198-200, Issue PART 1, 1996, Pages 111-114

Plasma deposited non-stoichiometric hydrogenated germanium sulfide a-Ge1-xSx:H( x < 0.3)

(7) Drüsedau, Tilo P a,b Wickboldt, Paul a Chen, Joseph H a Pang, Dawen a Freistedt, Hubertus b Bläsing, Jürgen b Bock, Wolfgang c

a HARVARD UNIVERSITY (United States)

b OTTO VON GUERICKE UNIVERSITY (Germany)

c University of Koblenz Landau (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRODES; GERMANIUM COMPOUNDS; HYDRIDES; HYDROGENATION; LIGHT ABSORPTION; PLASMA APPLICATIONS; SULFUR COMPOUNDS;

GERMANIUM HYDRIDE; HYDROGENATED AMORPHOUS GERMANIUM SULFUR ALLOYS; INFRARED ABSORPTION BAND; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RADIAL DISTRIBUTION FUNCTIONS; SECONDARY NEUTRAL MASS SPECTROMETRY; SULFURHEXAFLUORIDE;

AMORPHOUS ALLOYS;

EID: 0030563295 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/0022-3093(95)00658-3 Document Type: Article

Times cited : (4)

References (9)

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