Nanocrystalline si-based resistive humidity sensors prepared via HWCVD at various filament temperatures

IEEE Electron Device Letters

Volumn 33, Issue 6, 2012, Pages 905-907

  Hsueh, T J ^a   Chen, Y H ^b   Weng, W Y ^c   Tsai, T Y ^c   Hsueh, H T ^a   Hus, C L ^b   Dai, B T ^a   Shieh, J M ^a  

^a National Nano Devices Laboratories   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

hot wire chemical vapor deposition (HWCVD); Humidity; nanocrystalline; silicon

Indexed keywords

AVERAGE DIAMETER; FILAMENT TEMPERATURE; GLASS SUBSTRATES; HOT WIRE CHEMICAL VAPOR DEPOSITION; NANOCRYSTALLINE SI; NANOCRYSTALLINES; RESISTIVE HUMIDITY SENSOR; RESISTIVITY CHANGES; SENSOR RESPONSE; SI-BASED;

ATMOSPHERIC HUMIDITY; CHEMICAL VAPOR DEPOSITION; HUMIDITY SENSORS; NANOCRYSTALLINE SILICON; SILICON; SUBSTRATES; VAPORS; WIRE;

FABRICATION;

EID: 84861715491     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2192711     Document Type: Article

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