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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 2, 2012, Pages

Growth of GaSb1-xBix by molecular beam epitaxy

(5) Song, Yuxin a Wang, Shumin a Saha Roy, Ivy a Shi, Peixiong b Hallen, Anders c

a CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

b TECHNICAL UNIVERSITY OF DENMARK (Denmark)

c ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY;

GAAS SUBSTRATES; GROWTH WINDOW; ROCKING CURVES; XRD;

GALLIUM ALLOYS;

EID: 84861624315 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3672025 Document Type: Article

Times cited : (48)

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