Growth and characterization of GaSb bulk crystals with low acceptor concentration

Journal of Electronic Materials

Volumn 25, Issue 7, 1996, Pages 1082-1087

  Danilewsky, A N ^a   Lauer, S ^a   Meinhardt, J ^a   Benz, K W ^a   Kaufmann, B ^b   Hofmann, R ^b   Dornen A ^b  

^a UNIVERSITY OF FREIBURG   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Bi solution; Bulk crystal growth; Gallium antimonide; GaSb; Hall measurements; Intrinsic acceptor; Photoluminescence; Traveling heater method

Indexed keywords

CHARACTERIZATION; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; GROWTH (MATERIALS); PHOTOLUMINESCENCE;

BULK CRYSTALS; GALLIUM ANTIMONIDES; HALL MEASUREMENTS; INTRINSIC ACCEPTORS; OPTOELECTRONIC PROPERTIES; TRAVELING HEATER METHOD;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030180670     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02659907     Document Type: Article

References (23)

1. A.G. Milnes and A.Y. Polyakov, Solid-State Electron. 36 (6), 803 (1993).
2. K.W. Benz, European Electron. 4, 28 (1981).
3. O. Hildebrandt, W. Kuebart, K.W. Benz and M.H. Pilkuhn, IEEE J. Quant. Electron. QE17, 2, 284 (1981).
4. K.B. McAfee, Jr., D.M. Gay, R.S. Hozak, R.A. Laudise, G. Schwartz and W.A. Sunder, J. Cryst. Growth 76, 263 (1986).
5. H.K. Choi and S.J. Eglash, Appl. Phys. Lett. 59 (10), 1165 (1991).
6. V.J. van der Meulen, J. Phys. Chem. Solids 28, 25 (1967).
7. A. Hoyo and I. Kuru, Proc. Int. Conf: Solid State Devices, Tokyo, 17 (1973).
8. C. Woelk and K.W. Benz, J. Cryst. Growth 27, 177 (1974).
9. Meng-Chi Wu, Chyuan-Wei Chen and Chi-Ching Chen, J. Appl. Phys. 72 (3), 1101 (1992).
10. C. Anayama, T. Tanahashi, H. Kuwatsuka, S. Nishiyama, S. Isozumi and K. Nakajima, Appl. Phys. Lett. 56 (3), 239 (1990).
11. Yuh-Maoh Sun, Meng-Chyi Wu and Yuan-Tzu Ting, J. Cryst. Growth 158, 449 (1996).
12. M. Lee, D.J. Nicholas, K.E. Singer and B. Hamilton, J. Appl. Phys. 59 (8), 2895 (1986).
13. W. Jakowetz, D. Barthruff and K.W. Benz, Inst. Phys. Conf: Ser. No. 33a, 41 (1977).
14. T. Koljonen, M. Sopanen, H. Lipsanen and T. Tuomi, J. Electron. Mater. 24 (11) 1995.
15. V.P. Germogenov, Y.I. Otman, V.V. Chaldyshev, Y.V. Shmartsev and L.E. Épiktetova, Sov. Phys. Semicond. 24 (6), 689 (1990).
16. Y.F. Biryulin, V.P. Germogenov, O.M. Ivleva, S.G. Konnikov, Y.I. Otman, V.V. Tret'yakov, V.V. Chaldyshev, Y.V. Shmartsev, V.A. Shul'bakh and L.E. Épiktetova, Sov. Tech. Phys. Lett. 14 (9), 719 (1988).
17. P. Gladkov, E. Monova and J. Weber, J. Cryst. Growth 146, 319 (1995).
18. K.W. Benz and G. Müller, J. Cryst. Growth 46, 35 (1979).
19. A.N. Danilewsky and K.W. Benz, J. Cryst. Growth 106, 273 (1990).
20. A.N. Danilewsly, P. Dold and K.W. Benz, J. Cryst. Growth 121, 305 (1992).
21. W.J. Bartels, J. Vac. Sci. Technol. B 1 (2), 338 (1983).
22. E.V. Solo'eva and M.G. Mil'vidskil, Sov. Phys. Semicond. 17 (11), 1289 (1983).
23. W. Rühle, W. Jakowetz, C. Woelk, R. Linnebach and M. Pilkuhn, Phys. Status Solidi (b) 73, 255 (1976).