Cobalt polishing with reduced galvanic corrosion at copper/cobalt interface using hydrogen peroxide as an oxidizer in colloidal silica-based slurries

Journal of the Electrochemical Society

Volumn 159, Issue 6, 2012, Pages

  Peethala, B C ^a,c   Amanapu, H P ^a   Lagudu, U R K ^b   Babu, S V ^a,b  

^a Clarkson University   (United States)

^b CLARKSON UNIVERSITY   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CO FILMS; COMPLEXING AGENTS; DISSOLUTION RATES; GALVANIC CORROSION; MATERIAL REMOVAL PROCESS; OPEN CIRCUIT POTENTIAL; PASSIVE FILMS; PIT FORMATION; REMOVAL MECHANISM; REMOVAL RATE; SILICA ABRASIVES; SILICA-BASED SLURRIES;

ARGININE; COBALT; CORROSION; DISSOLUTION; HYDROGEN PEROXIDE; POLISHING; SILICA; SLURRIES;

COBALT COMPOUNDS;

EID: 84861413277     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.073206jes     Document Type: Article

References (33)

1. J. Van Olmen, S. List, Z. Tokei, L. Carbonell, S. H. Brongersma, H. Volders, E. Kunnen, N. Heylen, I. Ciofi, A. Khandelwal, J. Gelatos, T. Mandrekar, and P. Boelen, in Proceedings of the International Interconnect Technology Conf., Burlingame, CA, IEEE 2007, p. 49.
2. C.-X. Yang, S.-J. Ding, D. W. Zhang, P.-F. Wang, X.-P. Qu, and R. Liu, Electrochem. and Solid-State Lett., 14, H84 (2010). 10.1149/1.3518522
3. R. G. Gordon, H. Kim, Y. B. Au, H. Wang, H. B. Bhandari, Y. Liu, D. K. Lee, and Y. Lin, Proceedings of Advanced Metallization Conf. (AMC 2008), San Diego, CA, U.S.A. (2008).
4. T. N. Arunagiri, Y. Zhang, O. Chyan, M. J. Kim, and T. Q. Hurd, J. Electrochem. Soc., 152, G808 (2005). 10.1149/1.2039939
5. W. Sari, T.-K. Eom, C.-W. Jeon, H. Sohn, and S.-H. Kim, Electrochem. and Solid-State Lett., 12, H248 (2009). 10.1149/1.3117242
6. D. Josell, D. Wheeler, C. Witt, and T. P. Moffat, Electrochem. and Solid-State Lett., 6, C143 (2003). 10.1149/1.1605271
7. H. Wojcik, R. Kaltofen, U. Merkel, C. Krien, S. Strehle, J. Gluch, M. Knaut, C. Wenzel, A. Preusse, J. W. Bartha, M. Geidel, B. Adolphi, V. Neumann, R. Liske, and F. Munnik, Microelectronic Engg. (2011).
8. B. C. Peethala and S. V. Babu, J. Electrochem. Soc., 158, H271 (2011). 10.1149/1.3528942
9. B. C. Peethala, D. Roy, and S. V. Babu, Electrochem. and Solid-State Lett., 14, H306 (2011). 10.1149/1.3589308
10. L. Zhengwen, G. G. Roy, B. F. Damon, L. Youbo, and V. Joost, Electrochem. and Solid-State Lett., 8, G182 (2005). 10.1149/1.1924929
11. T. Bernhard, R. Pfandzelter, and H. Winter, Surf. Sci., 543, 36 (2003). 10.1016/S0039-6028(03)00819-7
12. J. Koike and M. Wada, App. Phys. Lett., 87, 041911 (2005). 10.1063/1.1993759
13. M. Haneda, J. Iijima, and J. Koike, App. Phys. Lett., 90, 252107 (2007). 10.1063/1.2750402
14. J. Koike, M. Haneda, J. Iijima, Y. Otsuka, H. Sako, and K. Neishi, J. Appl. Phys., 102, 043527 (2007). 10.1063/1.2773699
15. P. Ma, L. Qian, A. Sundarrajan, L. Jiang, J. Aubuchon, J. Tseng, N. Kumar, M. Okazaki, W. Yuchun, W. You, C. Yufei, M. Naik, I. Emesh, and M. Narasimhan, in Proceedings of the Interconnect Technology Conference, Sapporo, Japan, 2009, IEEE International (2009), p. 38.
16. S. Bilouk, L. Broussous, R. P. Nogueira, V. Ivanova, and C. Pernel, Microelectronic Engg., 86, 2038 (2009). 10.1016/j.mee.2009.01.035
17. H. Nishizawa, H. Nojo, and A. Isobe, Jpn. J. Appl. Phys., 49, 05FC03 (2010). 10.1143/JJAP.49.05FC03
18. M. C. Bernard, C. Gabrielli, S. Joiret, C. Mace, E. Ostermann, and A. Pailleret, Electrochim. Acta, 53, 1325 (2007). 10.1016/j.electacta.2007.03.018
19. W. A. Badawy, F. M. Al-Kharafi, and J. R. Al-Ajmi, J. App. Electrochem., 30, 693 (2000). 10.1023/A:1003893122201
20. D. Gallant and S. Simard, Corr. Sci., 47, 1810 (2005). 10.1016/j.corsci.2004.08.008
21. W. R. Harris, G. McLendon, and A. E. Martell, J. Am. Chem. Soc., 98, 8378 (1976). 10.1021/ja00442a011
22. S. K. Joshi, V. K. Hinge, and B. D. Shrivastava, 13th International Conference of X-ray absorption fine structure-XAFS13, Stanford, CA, USA 882 (2007).
23. M. S. Michailidis and R. B. Martin, J. Am. Chem. Soc., 91, 4683 (1969). 10.1021/ja01045a015
24. C. Tanford, D. C. Kirk, and M. K. Chantooni, J. Am. Chem. Soc., 76, 5325 (1954). 10.1021/ja01650a018
25. Y. N. Prasad and S. Ramanathan, Electrochim. Acta, 52, 6353 (2007). 10.1016/j.electacta.2007.04.044
26. V. R. K. Gorantla, E. Matijevic, and S. V. Babu, Chem. Mat., 17, 2076 (2005). 10.1021/cm048478f
27. V. R. K. Gorantla, D. Goia, E. Matijevic, and S. V. Babu, J. Electrochem. Soc., 152, G912 (2005). 10.1149/1.2083287
28. M. Hariharaputhiran, J. Zhang, S. Ramarajan, J. J. Keleher, L. Yuzhuo, and S. V. Babu, J. Electrochem. Soc., 147, 3820 (2000). 10.1149/1.1393979
29. G. W. Poling, Corr. Sci., 10, 359 (1970). 10.1016/S0010-938X(70)80026-9
30. E. Matijevic and S. V. Babu, Journal of Colloid and Interface Science, 320, 219 (2008). 10.1016/j.jcis.2007.11.057
31. K. M. Ismail and W. A. Badawy, J. App. Electrochem., 30, 1303 (2000). 10.1023/A:1026560422090
32. A. Aledresse and A. Alfantazi, J. Mat. Sci., 39, 1523 (2004). 10.1023/B:JMSC.0000013934.85378.40
33. K. A. Assiongbon, S. B. Emery, C. M. Pettit, S. V. Babu, and D. Roy, Mat. Chem. and Phys., 86, 347 (2004). 10.1016/j.matchemphys.2004.03.016