Junction formation of Cu 3BiS 3 investigated by Kelvin probe force microscopy and surface photovoltage measurements

Beilstein Journal of Nanotechnology

Volumn 3, Issue 1, 2012, Pages 277-284

  Mesa, Fredy ^a,b   Chamorro, William ^a   Vallejo, William ^a   Baier, Robert ^c   Dittrich, Thomas ^c   Grimm, Alexander ^c   Lux Steiner, Martha C ^c   Sadewasser, Sascha ^c,d  

^a UNIVERSIDAD NACIONAL DE COLOMBIA   (Colombia)

^b UNIVERSIDAD LIBRE   (Colombia)

^c HAHN MEITNER INSTITUT   (Germany)

^d INTERNATIONAL IBERIAN NANOTECHNOLOGY LABORATORY   (Portugal)

Author keywords

Buffer layer; Cu 3BiS 3; Kelvin probe force microscopy; Solar cells

Indexed keywords

ABSORBER LAYERS; ABSORBER MATERIAL; BANDBENDING; CDS; CHARGE SEPARATIONS; COMPOUND SEMICONDUCTORS; DEFECT STATE; EXCITATION WAVELENGTH; GRANULAR STRUCTURESS; JUNCTION FORMATION; KELVIN PROBE FORCE MICROSCOPY; MACROSCOPIC MEASUREMENTS; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAIC ENERGY; POLYCRYSTALLINE THIN FILM; SMALL GRAINS; SURFACE PHOTOVOLTAGES; THIN-FILM SOLAR CELLS;

BUFFER LAYERS; CADMIUM COMPOUNDS; CADMIUM SULFIDE; DISTRIBUTION FUNCTIONS; ENERGY GAP; GRAIN BOUNDARIES; NANOSTRUCTURED MATERIALS; OPTICAL WAVEGUIDES; PHOTOVOLTAIC EFFECTS; PROBES; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; SURFACE DEFECTS; SURFACE PROPERTIES; ZINC SULFIDE;

COPPER;

EID: 84861397793     PISSN: None     EISSN: 21904286     Source Type: Journal    
DOI: 10.3762/bjnano.3.31     Document Type: Article

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