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Applied Physics Letters

Volumn 96, Issue 8, 2010, Pages

Transient surface photovoltage of p-type Cu3BiS3

(6) Mesa, F a Gordillo, G a Dittrich, Th b Ellmer, K b Baier, R b Sadewasser, S b

a UNIVERSIDAD NACIONAL DE COLOMBIA (Colombia)

b HAHN MEITNER INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BANDBENDING; CHARGE SEPARATIONS; CHARGE TRANSPORT; CO-EVAPORATIONS; DEFECT STATE; ELECTRIC POWER; EXCITATION WAVELENGTH; FREE CARRIER CONCENTRATION; KELVIN PROBE FORCE MICROSCOPY; P TYPE SEMICONDUCTOR; P-TYPE; SEEBECK; SURFACE PHOTOVOLTAGES;

CARRIER CONCENTRATION; DEFECTS; GALVANOMAGNETIC EFFECTS; GRAIN BOUNDARIES; HALL MOBILITY; PASSIVATION; SURFACE PROPERTIES;

COPPER;

EID: 77749297982 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3334728 Document Type: Article

Times cited : (55)

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