Preparation of Cu(In,Ga)Se 2 films via direct heating the selenium-containing precursors without selenization

Ceramics International

Volumn 38, Issue 6, 2012, Pages 5319-5323

  Chen, Fu Shan ^a   Ma, Jeng Shin ^a   Lu, Chung Hsin ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Cu(In,Ga)Se 2; NaBH 4; Thin films

Indexed keywords

ABSORBER LAYERS; AFM; AMBIENT ATMOSPHERE; CHEMICAL REDUCTION; COPPER-INDIUM-SELENIDE; CU(IN , GA)SE; DIRECT HEATING; NABH 4; NANOMETER SIZE; PRECURSOR POWDER; REDOX POTENTIALS; REDUCING ATMOSPHERE; ROOT MEAN SQUARE ROUGHNESS; SELENIDES; SELENIZATION;

CALCINATION; COPPER; FILM PREPARATION; GALLIUM; INDIUM COMPOUNDS; REDOX REACTIONS; SELENIUM; THIN FILMS; TOXIC MATERIALS; VAPORS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84861344675     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2012.03.031     Document Type: Article

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