Improved fill factor and open circuit voltage by crystalline selenium at the Cu(In,Ga)Se2/buffer layer interface in thin film solar cells

Progress in Photovoltaics: Research and Applications

Volumn 18, Issue 4, 2010, Pages 249-256

  Platzer Bjorkman C ^a   Zabierowski, P ^b   Pettersson, J ^a   Torndahl T ^a   Edoff, M ^a  

^a UPPSALA UNIVERSITY   (Sweden)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Buffer layer; CIGS; Interface; Selenium; Thin film solar cells

Indexed keywords

CDS; CIGS; CU(IN , GA)SE; DEVICE PERFORMANCE; DEVICE STRUCTURES; FILL FACTOR; GRAZING INCIDENCE X-RAY DIFFRACTION; PARTIAL COVERAGE; SELENIUM THIN FILMS; THIN FILM SOLAR CELLS; ZN(O ,S);

ATOMIC LAYER DEPOSITION; BUFFER LAYERS; CADMIUM COMPOUNDS; CADMIUM SULFIDE; CRYSTALLINE MATERIALS; EPITAXIAL LAYERS; GALLIUM; OPEN CIRCUIT VOLTAGE; OPTICAL WAVEGUIDES; SELENIUM; SOLAR CELLS; SURFACE TREATMENT; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 77952766221     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.957     Document Type: Article

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