12.6% efficient CdS/Cu(In,Ga)S2-based solar cell with an open circuit voltage of 879 mV prepared by a rapid thermal process

Solar Energy Materials and Solar Cells

Volumn 95, Issue 3, 2011, Pages 864-869

  Merdes, S ^a   Mainz, R ^a   Klaer, J ^a   Meeder, A ^b   Rodriguez Alvarez, H ^a   Schock, H W ^a   Lux Steiner, M Ch ^a   Klenk, R ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b Sulfurcell Solartechnik GmbH   (Germany)

Author keywords

CIGS; Rapid thermal processing; Solar cell; Thin film

Indexed keywords

CIGS; CU(IN ,GA)S; GALLIUM DIFFUSION; MULTISOURCES; RAPID THERMAL PROCESS; SULFUR VAPORS; TEMPERATURE PROFILES;

FILM PREPARATION; GALLIUM; OPEN CIRCUIT VOLTAGE; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SOLAR CELLS; SULFUR; THIN FILMS;

SOLAR ABSORBERS;

EID: 78751644359     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.11.003     Document Type: Article

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