Growth of nano size grains in CulnSe 2 thin films using e-beam deposition technique

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 7, 2009, Pages 4233-4239

  Ahmed, E ^a   Abid, M S ^a   Ahmed, W ^b  

^a BAHAUDDIN ZAKARIYA UNIVERSITY   (Pakistan)

^b UNIVERSITY OF CENTRAL LANCASHIRE   (United Kingdom)

Author keywords

E Beam deposition; Nano size crystallites; Substrate temperature; Thin films

Indexed keywords

ABSORBER LAYERS; ANALYTICAL TECHNIQUES; AS-GROWN FILMS; CHARACTERISATION; COPPER-BASED; CRYSTALLINE DEFECTS; DEPOSITION TEMPERATURES; DEPOSITION TIME; E-BEAM DEPOSITION; ELECTRICAL MEASUREMENT; ELECTRON BEAM EVAPORATION; ELECTROOPTICAL PROPERTIES; ELEVATED TEMPERATURE; ENERGY DISPERSIVE ANALYSIS; GLASS SLIDES; GRAIN STRUCTURES; MATERIAL PROPERTY; NANO SCALE; NANO-SIZE CRYSTALLITES; NANO-SIZE GRAINS; OPTIMIZED DEPOSITION CONDITIONS; P-TYPE CONDUCTIVITY; PHOTOVOLTAIC DEVICES; PREFERRED ORIENTATIONS; SCANNING ELECTRON MICROGRAPHS; SCHERRER FORMULA; SUBSTRATE TEMPERATURE; SURFACE RESISTIVITY; TARGET MATERIALS; VARIOUS SUBSTRATES;

CHEMICAL MODIFICATION; CHEMICAL VAPOR DEPOSITION; CRYSTALLITE SIZE; DEPOSITION RATES; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; OPTICAL PROPERTIES; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SELENIUM; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES; SURFACE STRUCTURE; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

DEPOSITION;

EID: 70350317591     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.M38     Document Type: Conference Paper

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