Spectrometric analysis of process etching solutions of the photovoltaic industry - Determination of HNO3, HF, and H2SiF 6 using high-resolution continuum source absorption spectrometry of diatomic molecules and atoms

Talanta

Volumn 94, Issue , 2012, Pages 335-341

  Bücker, Stefan ^a   Acker, Jörg ^a  

^a Hochschule Lausitz (FH) University of Applied Sciences   (Germany)

Author keywords

Aluminum mono fluoride (AlF); Atomic absorption spectrometry (AAS); High resolution continuum source atomic absorption spectrometer; Molecular absorption spectrometry (MAS); Nitrous monoxide (NO); Silicon; Texturization

Indexed keywords

ABSORPTION SPECTROSCOPY; ATOMIC ABSORPTION SPECTROMETRY; ATOMS; FLUORINE COMPOUNDS; HYDROFLUORIC ACID; NITRIC ACID; PHOTOVOLTAIC CELLS; SILICON; SILICON COMPOUNDS; SILICON WAFERS; SOLAR CELLS; SPECTROMETERS;

ABSORPTION SPECTROMETERS; ABSORPTION SPECTROMETRY; CONTINUUM SOURCE; MOLECULAR ABSORPTION SPECTROMETRY; MULTICRYSTALLINE SILICON WAFERS; NITROUS MONOXIDE (NO); SPECTROMETRIC ANALYSIS; TEXTURIZATION;

ALUMINUM COMPOUNDS;

EID: 84861233036     PISSN: 00399140     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.talanta.2012.03.052     Document Type: Article

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