Analysis of passive memristive devices array: Data-dependent statistical model and self-adaptable sense resistance for RRAMs

Proceedings of the IEEE

Volumn 100, Issue 6, 2012, Pages 2021-2032

  Shin, Sangho ^a   Kim, Kyungmin ^a   Kang, Sung Mo ^a  

^a University of California Santa Cruz   (United States)

Author keywords

Adaptable resistance; data pattern dependence; memristive devices; nonvolatile resistive memory; resistive random access memory (RRAM); statistical model

Indexed keywords

COMPUTATIONAL EFFICIENCY; MEMORY ARCHITECTURE; RESISTORS; RRAM;

DATA PATTERNS; MEMRISTIVE DEVICES; RESISTIVE MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); STATISTICAL MODELING;

MEMRISTORS;

EID: 84861192414     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2011.2165690     Document Type: Conference Paper

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