Origin of room temperature broadband light emission and carrier dynamics in Ag ion-implanted silicon nanocrystals

Optical Materials Express

Volumn 2, Issue 5, 2012, Pages 501-509

  Singh, Akhilesh K ^a   Gryczynski, Karol G ^a   Neogi, Arup ^a  

^a UNIVERSITY OF NORTH TEXAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUND EXCITON; BROAD BANDS; BROADBAND EMISSION; BROADBAND LIGHT; CARRIER DYNAMICS; CRYSTALLINE SI; EMISSION INTENSITY; EXCITONIC STATE; FLUENCES; GREEN EMISSIONS; INTER-BAND TRANSITION; ION-IMPLANTED SILICON; LIGHT EMISSION INTENSITY; LOCALIZED DEFECTS; LOW ENERGIES; NANO SCALE; RADIATIVE EFFICIENCY; RED WAVELENGTH RANGE; ROOM TEMPERATURE; SI NANOCRYSTAL; SI NANOPARTICLES; SILICON NANOPARTICLES; SILVER NANOPARTICLES; SINGLE SILICON SUBSTRATE; SPECTRAL CHARACTERISTICS; SURFACE AND INTERFACES; SURFACE AREA; SYSTEMATIC STUDY; TIME-RESOLVED PHOTOLUMINESCENCE; ULTRA-VIOLET; UV- AND;

ANNEALING; ION IMPLANTATION; LIGHT EMISSION; METAL IONS; NANOCRYSTALS; NANOPARTICLES; NUCLEATION; OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM WELLS; SILICON; SURFACE DEFECTS;

SILVER;

EID: 84861174160     PISSN: None     EISSN: 21593930     Source Type: Journal    
DOI: 10.1364/OME.2.000501     Document Type: Article

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